PART |
Description |
Maker |
HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
HYB25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
|
Infineon
|
HYE18P32160AC-15 |
Specialty DRAMs - 2Mx16, VFBGA-54; Available 2Q04
|
Infineon
|
HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
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AT88SC0204CA-MP88SC0204 AT88SC0204CA-WI88SC0204 AT |
SPECIALTY MEMORY CIRCUIT, DMA SPECIALTY MEMORY CIRCUIT WAFER SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8 SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8 SPECIALTY MEMORY CIRCUIT, QMA
|
Atmel, Corp. ATMEL CORP
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M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位,4BanksK的刷新,3.3V的同步DRAM的社民党 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA Personal protection, Spectacles; RoHS Compliant: NA Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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M464S0924BT1 M464S1724BT1SDRAMSODIMM |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
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Samsung Electronic
|
EH4645ETTS-33.333M |
OSCILLATORS 50PPM -40 85 3.3V 4 33.333MHZ TS CMOS 3.2X2.5 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 33.333 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
EH4720TS-33.333M |
OSCILLATORS 20PPM 0 70 2.5V 4 33.333MHZ TS CMOS 3.2X2.5 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 33.333 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
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